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B30N10D

N-Channel 100-V (D-S) MOSFET

B30N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

Feature:

  • RDS(ON)=28mΩ@VGS=10V
  • High Density Cell Design for Low RDS(ON)
  • Exceptional On-Resistance and Maximum DC Current
  • TO-252-3 Package

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MOSFET 1225780