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B18N20F

N-Channel 200-V (D-S) MOSFET

B18N20F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

Feature:
RDS(ON)=180mΩ@VGS=10V
Improved dv/dt capability, high ruggedness
Exceptional on-resistance and maximum DC current
TO-220F-3 Package

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MOSFET 1225795