B3910D
NMOS 30V(Vds) 12A(Id)
B3910D is a N-Channel logic enhancement mode power field effect transistor using high cell density, DMOS trench technology in roduction. This high density process is especially tailored to minimize on-state resistance. The device is particularly suitable for low voltage applications such as cellular phone and notebook computer power management, and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
Feature:
- RDS(ON)=22mΩ@VGS=10V
- RDS(ON)=26mΩ@VGS=4.5V
- Super High Density Cell Design for Extremely Low RDS(ON)
- Exceptional On-Resistance and Maximum DC Current
- TO-252-3 Package
