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P-Channel 30-V (D-S) MOSFET

B3913K is the P-Channel logic enhancement mode power field effect transistor using high cell density, DMOS trench technology in production. This high density process is especially tailored to minimize on-state resistance. The device is particularly suitable for low voltage applications such as cellular phone and notebook computer power management, and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.


  • RDS(ON)=80mΩ@VGS=10V
  • RDS(ON)=95mΩ@VGS=4.5V
  • Super High Density Cell Design for Extremely Low RDS(ON)
  • Exceptional On-Resistance and Maximum DC Current
  • SOT23-3 Package
MOSFET 1225266