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N- and P-Channel 30-V (D-S) MOSFET

B3942 is the N- and P-Channel logic enhancement mode power field effect transistor using high cell density, DMOS trench technology in production. This high density process is especially tailored to minimize on-state resistance. The device is particularly suitable for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.


  • RDS(ON)=25mΩ@VGS=10V (N-Ch)
  • RDS(ON)=40mΩ@VGS=4.5V (N-Ch)
  • RDS(ON)=35mΩ@VGS=-10V (P-Ch)
  • RDS(ON)=58mΩ@VGS =-4.5V (P-Ch)
  • Super High Density Cell Design for Extremely Low RDS(ON)
  • Exceptional On-Resistance and Maximum DC Current
  • SOP-8 Package
MOSFET 1225290