B15N10F
N-Channel 100-V (D-S) MOSFET
B15N10F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Feature:
- RDS(ON)=105mΩ@VGS=10V
- High Density Cell Design for Low RDS(ON)
- Exceptional On-Resistance and Maximum DC Current
- TO-220F-3 Package