B15N10F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

Feature:

• RDS(ON)=105mΩ@VGS=10V
• High Density Cell Design for Low RDS(ON)
• Exceptional On-Resistance and Maximum DC Current
• TO-220F-3 Package