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B3912K3
https://www.bitek.com.tw/cn/ 硕颉科技股份有限公司
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B3912K

NMOS 30V(Vds) 4.3A(Id)

B3912K is the N-Channel logic enhancement mode power field effect transistor using high cell density, DMOS trench technology in production. This high density process is especially tailored to minimize on-state resistance. The device is particularly suitable for low voltage applications such as cellular phone and notebook computer power management, and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

Feature:

  • RDS(ON)=36mΩ@VGS=10V
  • RDS(ON)=50mΩ@VGS=4.5V
  • Super High Density Cell Design for Extremely Low RDS(ON)
  • Exceptional On-Resistance and Maximum DC Current
  • SOT23-3 Package

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