B30N10D
NMOS 100V(Vds) 30A(Id)
(相容: AOD2916, AOD482, IDP33CN10N G, IRFR540ZPbF, IPD30N10S3L-34, NTD6414AN, FDB86102LZ, SUD35N10, STD25NF10L, FDD3680)
B30N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Feature:
- RDS(ON)=42mΩ@VGS=10V
- High Density Cell Design for Low RDS(ON)
- Exceptional On-Resistance and Maximum DC Current
- TO-252-3 Package
